Semiconductor Laser with Optical Feedback - Integrated 3-Section Device - 12.5GHz Detection BW
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|Author||Joshua P. Toomey|
|Maintainer||Dr Joshua P Toomey, MQ Photonics Research Centre, Dept of Physics and Astronomy, Macquarie University|
|authorlist||J. P. Toomey, P. Sajewicz, D. M. Kane, L. Fu, H. H. Tan, K. Vora, C. Jagadish|
|detailed_info||Time series data of the output power of monolithically integrated 3-section InGaAs/GaAs semiconductor laser devices. Devices manufactured by Pawel Sajewicz (firstname.lastname@example.org) at ANU. Devices consist of a 1.5mm laser section, a 0.15mm gain/absorption (G/A) section and a passive waveguide (PW) section of length 1mm, 2mm or 5mm. Optical feedback is provided by a high reflectance coating on the end of the PW section. The level of optical feedback is controlled by applying bias to the G/A section. Forward bias for amplification and reverse bias for attenuation. Output power was recorded on an 18GHz photodiode (Discovery Semiconductors DSC30S) on a 12.5GHz real-time oscilloscope (Tektronix MSO71254) as the both the laser section injection current and G/A section bias were varied systematically over a range of interest. The laser section was pulsed by using a Keysight B2902A (B2962A) SMU to modulate a Profile ITC510 laser diode current supply. The G/A section was biased with either a forward current from a Profile ITC502 current supply or reverse voltage from a National Instrument PCI6703 DAQ card. Each HDF5 file contains time series for all laser section currents for a particular fixed G/A section bias as specified in the filename. All time series contain 200kpts. Analysis folder includes maps of time series RMS and average amplitude.|
|reference||P. Sajewicz, L. Fu, H. H. Tan, K. Vora, J. P. Toomey, D. M. Kane, and C. Jagadish, 'Monolithically integrated three-section semiconductor laser by selective area quantum well intermixing', in preparation (2016)|